M3966m Mosfet Verified |top| Jun 2026

The marking “M3966M” seen on small QFN/PDFN MOSFETs used in laptop and GPU VRAM power circuits most commonly corresponds to the UBIQ (or OEM-labeled) QM3966 family (examples: QM3966M3, QM3966M6). These are N‑channel power MOSFETs in compact packages (PDFN/QFN variants) rated for low voltage (≈30 V) and designed for synchronous buck switching in high-current, space-constrained applications (VRAM/GPU VR rails, CPU/GPU power stages).

| Parameter | Typical Value | Unit | Condition | |-----------|--------------|------|------------| | Drain-Source Voltage (V( DSS)) | 60 | V | V( GS) = 0V | | Gate-Source Voltage (V( GSS)) | ±20 | V | – | | Continuous Drain Current (I( D)) | 12-15 | A | T( C) = 25°C | | Pulsed Drain Current (I( DM)) | 45-50 | A | Pulse width limited | | On-Resistance (R( DS(on))) | 0.028 – 0.035 | Ω | V( GS) = 10V, I( D) = 5A | | Gate Threshold Voltage (V( GS(th))) | 2 – 4 | V | V( DS) = V( GS), I( D) = 250µA | | Input Capacitance (C( iss)) | 450 – 550 | pF | V(_DS) = 25V, f = 1MHz | | Total Gate Charge (Q( g)) | 12 – 16 | nC | V( GS) = 10V | m3966m mosfet verified

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The M3966M is often interchangeable with related models in the series, such as: 2AMV3369AC The marking “M3966M” seen on small QFN/PDFN MOSFETs

: Used in precision analog power stages and IoT devices where small geometry and low power dissipation are required. Circuit Protection : Frequently utilized in laptop motherboards (such as replacement parts) for reliable power rail switching. Key Features Low On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub space-constrained applications (VRAM/GPU VR rails

| Parameter | Measured | Typical spec | Pass | |-----------|----------|--------------|------| | Ciss (VDS=25V, f=1MHz) | 680 pF | 700 pF | ✓ | | Coss | 150 pF | 160 pF | ✓ | | Crss | 45 pF | 50 pF | ✓ | | Qg (VDD=30V, ID=6A) | 18 nC | 20 nC | ✓ |